Julita Smalc-Koziorowska

assistant professor

Institute of High Pressure Physics

Poland

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About

Julita Smalc-Koziorowska is an assistant professor at the Institute of High Pressure Physics PAS in Poland. Her research focuses on advanced materials for optoelectronics, particularly in the areas of gallium nitride (GaN) and indium gallium nitride (InGaN) systems. Recent publications include investigations into the growth and properties of semiconductor layers and their implications for hydrogen evolution reactions and photoluminescence efficiency.

Articles (16)

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2025

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2025

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2024

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2024

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2024

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2023

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2023

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2023

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2023

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2022

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2021

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2021

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2021

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2021

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2021

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2021

Collaborators (23)

Robert Czernecki

Institute of High Pressure Physics

POLAND

Julita Smalc-Koziorowska

Research Interests

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About

Articles (16)

Development of Semi-Insulating gallium nitride layers on native substrates by magnesium ion implantation and Ultra-High-Pressure annealing

m-Line Frank–Shockley Partial Dislocations in Wurtzite GaN: Atomistic Calculations and High Resolution Electron Microscopy Imaging

Influence of GaN substrate miscut on the XRD quantification of plastic relaxation in InGaN

Cutting-Edge PCN-ZnO Nanocomposites with Experimental and DFT Insights into Enhanced Hydrogen Evolution Reaction

Change in Growth Mode of BGaN Layers Grown on GaN

Impact of Interfaces on Photoluminescence Efficiency of High-Indium-Content (In,Ga) N Quantum Wells

Nanostars in Highly Si-Doped GaN

Formation of a-type dislocations near the InGaN/GaN interface during post-growth processing of epitaxial structures

The dissociation of (a+c) misfit dislocations at the InGaN/GaN interface

Bottom tunnel junction-based blue LED with a thin Ge-doped current spreading layer

Role of Metal Vacancies in the Mechanism of Thermal Degradation of InGaN Quantum Wells

Composition Inhomogeneity in Nonpolar (101̅0) and Semipolar (202̅1) InAlN Layers Grown by Plasma-Assisted Molecular Beam Epitaxy

Stacking Fault Manifolds and Structural Configurations of Partial Dislocations in InGaN Epilayers

Stacking Fault Manifolds and Structural Configurations of Partial Dislocations in InGaN Epilayers

Al<inf>2</inf>O<inf>3</inf>–W nanocomposites obtained by colloidal processing and in situ synthesis of nano-metal particles

Role of dislocations in nitride laser diodes with different indium content

Collaborators (23)

Robert Czernecki

Mateusz Hajdel

Aleksandra Kędzierska-Sar

Ewa Grzanka

Georgios Dimitrakopulos

Anna Feduniewicz-Żmuda

Grzegorz Staszczak

Marta Sawicka

Henryk Turski

Tomasz Sochacki

Artur Lachowski

Grzegorz Muziol

Joanna Moneta

Czeslaw Skierbiszewski

Agnieszka Opalińska

Mikołaj Żak

Agata Bojarska

Paweł Wolny

Marcin Siekacz

Witold Łojkowski

Roman Hrytsak

Stanislaw Gierlotka

Mikolaj Szafran

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