Anna Feduniewicz-Żmuda

Institute of High Pressure Physics

Poland

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Articles (11)

Year:

2025

Year:

2023

Year:

2023

Year:

2022

Year:

2022

Year:

2022

Year:

2022

Year:

2021

Year:

2021

Year:

2021

Year:

2020

Collaborators (15)

Mateusz Hajdel

Institute of High Pressure Physics

POLAND

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Jan Suffczynski

University of Warsaw

POLAND

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Grzegorz Staszczak

Institute of High Pressure Physics

POLAND

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Marta Sawicka

Institute of High Pressure Physics

POLAND

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Igor Prozheev

University of Helsinki

FINLAND

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Julita Smalc-Koziorowska

assistant professor

Institute of High Pressure Physics

POLAND

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Henryk Turski

Professor

Institute of High Pressure Physics

POLAND

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Tomasz Sochacki

Institute of High Pressure Physics

POLAND

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Grzegorz Muziol

Institute of High Pressure Physics, Polish Academy of Sciences

POLAND

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Joanna Moneta

Institute of High Pressure Physics

POLAND

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Czeslaw Skierbiszewski

Head of MBE group/Professor

Institute of High Pressure Physics, Polish Academy of Sciences

POLAND

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Mikołaj Żak

Institute of High Pressure Physics

POLAND

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Paweł Wolny

Institute of High Pressure Physics

POLAND

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Marcin Siekacz

Assistant professor

Institute of High Pressure Physics

POLAND

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Filip Tuomisto

University of Helsinki

FINLAND

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Anna Feduniewicz-Żmuda

Research Interests

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Articles (11)

Submicron Embedded Air/GaN Diffraction Gratings for Photonic Applications

Fabrication of GaN-air channels for embedded photonic structures

Impact of Interfaces on Photoluminescence Efficiency of High-Indium-Content (In,Ga) N Quantum Wells

Bottom tunnel junction-based blue LED with a thin Ge-doped current spreading layer

Electrically pumped blue laser diodes with nanoporous bottom cladding

Electrochemical etching of p-type GaN using a tunnel junction for efficient hole injection

Ion implantation of tunnel junction as a method for defining the aperture of III-nitride-based micro-light-emitting diodes

Tunnel Junctions with a Doped ( In,Ga)N Quantum Well for Vertical Integration of III -Nitride Optoelectronic Devices

Composition Inhomogeneity in Nonpolar (101̅0) and Semipolar (202̅1) InAlN Layers Grown by Plasma-Assisted Molecular Beam Epitaxy

Dependence of InGaN Quantum Well Thickness on the Nature of Optical Transitions in LEDs

Optimization of p-type contacts to InGaN-based laser diodes and light emitting diodes grown by plasma assisted molecular beam epitaxy

Collaborators (15)

Mateusz Hajdel

Jan Suffczynski

Grzegorz Staszczak

Marta Sawicka

Igor Prozheev

Julita Smalc-Koziorowska

Henryk Turski

Tomasz Sochacki

Grzegorz Muziol

Joanna Moneta

Czeslaw Skierbiszewski

Mikołaj Żak

Paweł Wolny

Marcin Siekacz

Filip Tuomisto

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