Henryk Turski

Has grant

Professor

Institute of High Pressure Physics

Poland

Research Interests

Explore related searches

Professors in Poland

Contact this professor

Get a free first email built on one of their papers, ready for you to edit and send yourself.

About

Professor Henryk Turski is a faculty member at the Institute of High Pressure Physics in Poland. His research focuses on advanced optical materials and devices, particularly in areas such as photoluminescence spectroscopy, gallium nitride (GaN) structures, and quantum well LEDs. His recent publications discuss the implications of built-in electric fields in LED technology, the characteristics of single photon emitters, and the effects of doping in nitride laser junctions.

Recent Grants

Grant: Close

Active Building Blocks for Visible and Near-Infrared Applications on a Silicon Nitride Interposer

Open Date: 2022-09-01

Close Date: 2026-08-31

Grant: Close

Polarity Engineering in Nitride Heterostructures

Open Date: 2018-10-01

Close Date: 2020-09-01

Grant: Close

Inżynieria pól elektrycznych oraz domieszkowania na typ p w heterostrukturach InGaN/InGaN wytwarzanych metodą epitaksji z wiązek molekularnych z plazmą azotową - rozwój zielonych diod azotkowych

Open Date: 2017-04-01

Close Date: 2020-03-31

Grant: Close

Mikroskopowy mechanizm wzrostu warstw InGaN i jego wpływ na fluktuacje składu indu

Open Date: 2012-08-14

Close Date: 2014-11-13

Articles (18)

Year:

2025

Year:

2025

Year:

2025

Year:

2025

Year:

2024

Year:

2024

Year:

2023

Year:

2023

Year:

2023

Year:

2023

Year:

2022

Year:

2022

Year:

2022

Year:

2022

Year:

2022

Year:

2021

Year:

2021

Year:

2021

Collaborators (22)

Leszek Konczewicz

Institute of High Pressure Physics

POLAND

Henryk Turski

Research Interests

Explore related searches

Contact this professor

About

Recent Grants

Articles (18)

Comparison of the LEDs benefiting from built-in electric fields grown on Ga- and N-polar bulk GaN substrates

Off-resonant photoluminescence spectroscopy of high-optical quality single photon emitters in GaN

Submicron Embedded Air/GaN Diffraction Gratings for Photonic Applications

Photoluminescence and Photocurrent from InGaN/GaN Diodes with Quantum Wells of Different Widths and Polarities

Microscopic correlation of doping distribution and luminescence in a nitride laser junction by Photonic Atom Probe

Harnessing III-Nitride Built-In Field in Multi-Quantum Well LEDs

Impact of Interfaces on Photoluminescence Efficiency of High-Indium-Content (In,Ga) N Quantum Wells

Nanostars in Highly Si-Doped GaN

Bidirectional light-emitting diode as a visible light source driven by alternating current

Competition between built-in polarization and p–n junction field in III-nitride heterostructures

Bottom tunnel junction-based blue LED with a thin Ge-doped current spreading layer

III-nitride optoelectronic devices containing wide quantum wells—unexpectedly efficient light sources

Role of Metallic Adlayer in Limiting Ge Incorporation into GaN

Negative Magnetoresistivity in Highly Doped n-Type GaN

Electrical transport properties of highly doped N-type GaN materials

Dependence of InGaN Quantum Well Thickness on the Nature of Optical Transitions in LEDs

Dislocation and indium droplet related emission inhomogeneities in InGaN LEDs

Optical properties of N-polar GaN: The possible role of nitrogen vacancy-related defects

Collaborators (22)

Leszek Konczewicz

Mateusz Hajdel

Jan Suffczynski

Anna Feduniewicz-Żmuda

Witold Trzeciakowski

Marta Sawicka

Pawel Kempisty

Igor Prozheev

Tadeusz Suski

Julita Smalc-Koziorowska

Tomasz Sochacki

Katarzyna Pieniak

Krzysztof Korona

Grzegorz Muziol

Joanna Moneta

Czeslaw Skierbiszewski

Mikołaj Żak

Paweł Wolny

Marcin Siekacz

Anna Reszka

Marcin Syperek

Sylvie Contreras

Make your next move.