Marcin Siekacz

Assistant professor

Institute of High Pressure Physics

Poland

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Articles (14)

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2024

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2024

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2023

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2023

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2023

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2022

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2022

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2022

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2022

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2022

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2022

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2022

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2021

Year:

2021

Collaborators (17)

Leszek Konczewicz

Institute of High Pressure Physics

POLAND

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Mateusz Hajdel

Institute of High Pressure Physics

POLAND

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Anna Feduniewicz-Żmuda

Institute of High Pressure Physics

POLAND

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Grzegorz Staszczak

Institute of High Pressure Physics

POLAND

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Marta Sawicka

Institute of High Pressure Physics

POLAND

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Pawel Kempisty

Assistant Professor

Institute of High Pressure Physics

POLAND

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Julita Smalc-Koziorowska

assistant professor

Institute of High Pressure Physics

POLAND

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Henryk Turski

Professor

Institute of High Pressure Physics

POLAND

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Lukas Uhlig

Chemnitz University of Technology

GERMANY

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Grzegorz Muziol

Institute of High Pressure Physics, Polish Academy of Sciences

POLAND

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Joanna Moneta

Institute of High Pressure Physics

POLAND

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Czeslaw Skierbiszewski

Head of MBE group/Professor

Institute of High Pressure Physics, Polish Academy of Sciences

POLAND

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Mikołaj Żak

Institute of High Pressure Physics

POLAND

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Paweł Wolny

Institute of High Pressure Physics

POLAND

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Anna Reszka

Institute of Physics

POLAND

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Filip Tuomisto

University of Helsinki

FINLAND

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Ulrich Schwarz

Professor

TU Chemnitz

GERMANY

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Marcin Siekacz

Research Interests

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Articles (14)

Dynamical Behavior of a Stacked Blue Laser Diode Consisting of Two Active Regions with Wide InGaN Quantum Wells and Two Tunnel Junctions

Influence of GaN substrate miscut on the XRD quantification of plastic relaxation in InGaN

Fabrication of GaN-air channels for embedded photonic structures

Nanostars in Highly Si-Doped GaN

Bidirectional light-emitting diode as a visible light source driven by alternating current

Bottom tunnel junction-based blue LED with a thin Ge-doped current spreading layer

Electrically pumped blue laser diodes with nanoporous bottom cladding

Electrochemical etching of p-type GaN using a tunnel junction for efficient hole injection

Ion implantation of tunnel junction as a method for defining the aperture of III-nitride-based micro-light-emitting diodes

Role of Metallic Adlayer in Limiting Ge Incorporation into GaN

Ion implantation of tunnel junction as a method for defining the aperture of III-nitride-based micro-light-emitting diodes

GaN-based bipolar cascade lasers with 25 nm wide quantum wells

Dependence of InGaN Quantum Well Thickness on the Nature of Optical Transitions in LEDs

Evolution of a dominant light emission mechanism induced by changes of the quantum well width in InGaN/GaN LEDs and LDs

Collaborators (17)

Leszek Konczewicz

Mateusz Hajdel

Anna Feduniewicz-Żmuda

Grzegorz Staszczak

Marta Sawicka

Pawel Kempisty

Julita Smalc-Koziorowska

Henryk Turski

Lukas Uhlig

Grzegorz Muziol

Joanna Moneta

Czeslaw Skierbiszewski

Mikołaj Żak

Paweł Wolny

Anna Reszka

Filip Tuomisto

Ulrich Schwarz

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